IRF 3N80 PDF

3N80 Amps, Volts N-channel Power Mosfet. DESCRIPTION. The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low gate . 3NTF3-T Amps, Volts N-channel Power Mosfet. DESCRIPTION. The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low . 3N80 Datasheet PDF Download – N-Channel MOSFET Transistor, 3N80 data sheet.

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CGS is the capacitance due to the overlap of the source and the channel regions by the polysilicon gate and is independent of applied voltage. RG is the total gate resistance in the circuit and the voltage drop 380 it is given by: They 0 are superior to the BJTs in high frequency applications where 1 10 switching power losses are important. BVDSS is normally measured at ?

CGD is a nonlinear function of voltage. The data sheet capacitances are defined in terms of the equivalent circuit capacitances as: Good circuit design practice dictates the use of a higher gate voltage than the bare minimum required for switching and therefore the gate charge used in the calculations is QG corresponding to t4.

The lower limit of this length is set by the ability to control the double-diffusion process and is around mm today.

The parasitic JFET appearing between the two body implants restricts current flow when the depletion widths of the two adjacent body diodes extend into the drift region with increasing drain voltage. Whatever your manufacturing need, come to 1-Source to buy electric components from the leading electronic component distributors and electronic component suppliers! The switching performance of a device is determined by the time required to establish voltage changes across capacitances.

Figure 3nn80 shows a typical switching time test circuit. Typical values of input Cissoutput Coss and reverse transfer Crss capacitances given in the data sheets are used by circuit designers as a starting point in determining circuit component values. Finally, CDS, the capacitance associated with the body-drift diode, varies inversely with the square root of the drain-source bias. There are tradeoffs to be made between RDS ief that requires shorter channel lengths and punch-through avoidance that requires longer channel lengths.

Pchannel devices have a higher VF due to the higher contact resistance between metal and p-silicon compared with n-type silicon. Brands Line Card Manufacturers. We are well known for our great prices, great selection, and as the leading online source for hard-to-find and hard-to-buy electronic component parts.

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Grant and John Gower.

Figure 10 shows a typical 3nn80 characteristics for this diode at two temperatures. RG is the distributed resistance of the gate and is approximately inversely proportional to active area.

Plus, they can withstand Maximum Current A simultaneous if of high current and voltage without Figure 2. When a voltage ramp appears across the drain and source terminal of the device a current I1 flows through the gate resistance, RG, by means of the gate-drain capacitance, CGD. If the applied drain voltage is greater than the openbase breakdown voltage, then the MOSFET will enter avalanche and may be destroyed if the current is not limited 3n08.

Channel length also affects transconductance. This continues until time t3. The invention of the power MOSFET was partly driven by the limitations of bipolar power junction transistors BJTs which, until recently, was the device of choice in power electronics applications.

3N80 поиск аналога электронного компонента (cross reference):

Current-Voltage undergoing destructive failure due to second breakdown. The planar design has already been introduced in the schematic of Figure 3. The limiting factor for even higher cell densities is the photolithography process control and resolution that allows contacts to be made to the source metallization in the center of the cells. Their forward voltage drop decreases with increasing temperature causing diversion of current to a single device when several MOS devices are paralleled.

We will gladly help you locate any Electronic or Electrical Parts. Finally the lower the gate oxide thickness the higher gfs. Reduced channel length is beneficial to both gfs and on-resistance, with punch-through as a tradeoff. The base resistance RB must be minimized through careful design of the doping and distance under the source region. These are normally negligible in high voltage devices but can become significant in low voltage devices.

Over time, new materials, structures and processing techniques are expected to raise these limits. Figure 11 a shows the transfer characteristics and Figure 11 b is an equivalent circuit model often used for the analysis of MOSFET switching performance. For example, a device with a gate charge of 20nC can be turned on in 20? Power Transistors RF Transistor. Cell density has increased over the years from around half a million per square inch in to around eight million for planar MOSFETs and around 12 million for the trench technology.

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This parameter is normally quoted for a Vgs that gives a drain current equal to about one half of the maximum current rating value and for a VDS that ensures operation in the constant current region.

The substrate contribution becomes more significant for lower breakdown voltage devices. When you buy electronic components from 1-Source you can be sure you are getting only the best parts at the best prices. Another BJT limitation is that both electrons and holes contribute to conduction.

This makes it more attractive to use the bipolar power transistor at the expense of worse high frequency performance. Despite the very advanced state of manufacturability and lower costs of BJTs, these limitations have made the base drive circuit design more complicated and hence more expensive than the power MOSFET. Similarly, turn-off delay, td offis the time taken to discharge the capacitance after the after is switched off.

Maximum values of 1. For drain voltages below BVDSS and with no bias on the D gate, no channel is a formed under the gate at the surface and the drain Source Source voltage is entirely Gate supported by the reverse-biased body-drift p-n junction. The metal oxide semiconductor field effect transistor MOSFET is based on the original field-effect transistor introduced in the 70s.

Аналоги для «3N80»

LS and LD are source and drain lead inductances igf are around a few tens of nH. The parasitic BJT can make the device susceptible to unwanted device turn-on and premature breakdown.

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The 1-Source Electronics group of companies provides a full suite of services to the electronics manufacturing industry. Transconductance lrf influenced by gate width, which increases in proportion to the active area as cell density increases.

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